ASEC-03 system is designed to study the electrical and photoelectrical properties and determining the electrophysical parameters of semiconductor and dielectric materials, as well as homo-and heterostructures based on them.
The system can be used both to carry out comprehensive research and testing to diagnose a variety of materials and devices.
- Q-DLTS - Charge relaxation isothermal spectroscopy of deep levels with electrical or optical excitation.
- IV - Dynamic and quasi-static current-voltage characteristics.
- C-V - V-capacity characteristics with linear and pulse scan
- Vph (t), Iph (t) - Kinetics of the photovoltage and the photocurrent at different intensity pulsed light
Allows measurment of
- The activation energy, capture cross section and density of deep levels (electrically active defects), as well as their distribution over the sample volume.
- Spectrum and the concentration of surface states.
- Leakage current, saturation, and the activation energy of conductivity. - Dielectric constant and breakdown voltage of thin films
- Band bending (surface potential) on the surface and interfaces of homo-and heterostructures main characteristics
- Sensitivity:
current, I - 1pA,
charge, DQ - 5x10-16 pendant.
- The concentration sensitivity of the Nt / N - 5x10-7 (Nt - the concentration of deep levels, N - concentration of free carriers).
- The range of variation of time (speed) of the window, tm - 2x10-6 - 200 sec.
- The range of temperatures, T - 80-520 K
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